• Dynamic Secondary Ion Mass Spectrometry instruments capable of parts-per-billion sensitivity for depth profiling analysis.
• Has high mass resolution capability, and often used for P doped samples in SI wafers (MR > 4000).
• Depth profiling can be optimized for low energy ultra-shallow implants or for several micron deep layers.

• Dual source (O & Cs)
• Sensitivity: ppm-ppb
• Depth resolution < 1nm
• Detect all elements with isotope information
• Sputter energy: O 2+: 1-10kv, Cs+: 1-15kv
• Best mass resolution > 25400

• Depth profiling
• Thin film composition: Ntrided gate oxide and SiGe
• Contamination analysis and control in oxide/active/well

• Time-of-flight Secondary Ion Mass Spectrometry is a versatile instrument capable of parts-per-million sensitivity or better with parallel detection for nearly all elements and molecules up to several thousand atomic mass units.
• Mass resolved imaging provides mapping with lateral resolution better than 150nm.
• Surface analysis sensitivity is comparable to TXRF, though it also provides lower mass range sensitivity and targeting of smaller areas.
• Depth profiling with sputter ion guns can be optimized for low energy ultra-shallow implants or for several micron deep layers.

• Mass range: 0-10,000 amu
• High mass resolution: M/ΔM over 10000
• Sensitivity: ppm-ppb
• Detected element: H – U (Isotope)
• Depth resolution: <1 nm
• Lateral resolution: 0.1-1 µm
• Sputter gun: O2+: 0.25-2kv, Cs+: 0.25-2kv
• Analysis gun: Bi+, 25kv

• Surface analysis of organic and inorganic materials
• Elemental and molecular information about surface, thin layer, interfaces of material and surface contamination
• Positive & negative ion mass spectra and 2-D ion mass spectral image information
• 3-D ion image analysis
• Depth profile analysis

• X-ray Photoelectron Spectroscopy is qualitative surface analysis technique that can characterize the surface chemistry of materials (chemical state and concentration).
• X-rays are focused onto material, and then measure the emitted electrons intensity and energy from the top 1-10nm of the surface.
• Quantified elemental depth profiling through layers can provide both layer and contamination intensities.

• Beam size: 7.5-200 um
• Lateral resolution: 10 µm
• Depth resolution: 1.0 nm
• Energy resolution: 0.48 eV
• Detected element: Li – U
• Sensitivity: 0.1-1.0 at%

• Surface analysis of inorganic and organic materials, contamination, stains or residues
• Quantification of surface elemental composition
• Determination of chemical state/bonding information
• Depth profiling for thin film/material composition
• Film/material and oxide thickness measurement

• Fourier Transform Infrared Spectroscopy (FTIR) is commonly used to extract specific information about chemical bonding and molecular structures. It is particularly powerful tool for analyzing organic materials.
• An infrared spectrum represents a fingerprint of a sample with absorption peaks that correspond to the frequencies of vibrations between the bonds of the atoms making up the material. Because each different material is a unique combination of atoms, no two compound produce the exact same Infrared spectrum.

• Mid- to Far-IR: 5000-80 cm-1
• Penetration depth: ~1-2 µm
• Sample size: >25 µm
• Full Commercial Spectra Library

• Identification of all types of organic compounds(solid and liquid) and organic functional groups (chemical bonds)

• Atomic Force Microscope (AFM) measures atomic surface topography, which is ideal for characterizing surface roughness at an angstrom scale.
• Besides surface roughness, AFM can provide quantitative measurements of grain size, step height by 3D surface topographic imaging, and capacitance, phase, magnetic field by pitch imaging.

• Vertical resolution ~0.1nm
• Best lateral resolution ~7nm
• Maximum scan area 80um x 80 um
• Current range in C-AFM 10pA – 10uA
• Force range in Nanoindentation 1-100uN

• Surface topology mapping
• Surface roughness measurement
• Electrical current mapping by Conductive Module
• Hardness and Modulus by Nanoindentation Module

• Electron backscatter diffraction (EBSD) is a microstructural-crystallographic characterisation technique to study any crystalline or polycrystalline material. The technique involves understanding the structure, crystal orientation and phase of materials in the Scanning Electron Microscope (SEM).

• Attached to Helios 600i
• Lateral resolution ~80nm
• Angle resolution ~0.3°

• Preferred orientation
• Special grain boundary (twin boundary, large angle and small angle boundaries)
• Grain size distribution

• Auger Electron Spectroscopy is a near surface (<5nm) instrument capable of quantifying many elements from a fraction of 1 atomic percent up to 100 percent. It also has better lateral resolution (<10nm) than TOF SIMS, and better surface sensitivity than EDX.
• Elemental Auger mapping is very flexible, and it excels in identifying the composition of small defects and residues.
• Quantified depth profiling through layers can provide both layer composition and interfacial contamination levels.

• FEG tip (3-25kV), small sample stage
• CMA detector (all elements except H & He)
• Detection limit: 0.1 to 1.0 atomic %
• SEM: 7nm@20kV; SAM: 10nm@20kV

• Small size defects down to 20-30nm
• Depth profiling to characterize the contamination
• Element mapping of nano defects

• Focused Ion Beam (FIB) is a versatile analysis technique that can be used to expose hidden defects in a variety of substrates.
• A common application is to prepare samples for TEM analysis using the lift-out technique.
• Another application of FIB is in circuit editing. Electrical connections can be cut and re-routed within the FIB system.

• Electro and Ion Beam Imaging
• Micro and Nano Patterning
• Site Specific Cross-sectioning
• Site Specific Deposition
• IC Circuit Editing
• 3D Progressive Milling
• 3D L-Shape Milling
• TEM Sample Preparation

• Argon Ion Beam: 100eV to 6.0 keV
• Cut Width: 0.5 – 5 mm
• Sample Size: 10 X 10 X 4 mm3
• Minimum Sample Temperature: -150°C

• Large Area Milling & Observation
• Preparation for SEM/EBSD/CAFM
• Delamination and porous cross section
• Delayer

• Transmission Electron Microscope (TEM) is a high resolution analysis technique that allows one to see detail on an atomic scale.
• Samples are generally prepared until they are thin enough for electrons to penetrate through it to the detector.
• Coupled with EDX or EELS, quantitative information can be obtained.
• Another application of TEM is to make metrology measurements of crystalline, amorphous, layers, etc.

Electron source

• Flexible high tension (20, 40, 80, 120, 160, 200 kV and values in between)
• Schottky field emitter with high maximum beam current (> 100 nA)
• High probe current (0.5 nA or more in 1 nm probe)

Imaging

• TEM point resolution (0.24nm)
• Information limit (0.14nm)
• TEM magnification range 25X-1030kx
• Maximum diffraction angle STEM HAADF resolution (0.19nm)
• STEM magnification range Maximum tilt angle with double-tilt holder + 40°
• EDS solid angle 0.13 srad
• Sample size 10um*4um*100nm(thickness)

• TEM Imaging and Measurement
• HRTEM Imaging
• EDS Elemental Mapping
• Diffraction analysis and Phase Reconstruction
• Planar View (PV) + Cross Section (XS) TEM
• One Stop Solution

• 0.5um recognition resolution
• High power penetration

• Non-destructive analysis through package
• Wire Bonding integrity
• Die attach delamination

• Reflection and Through scan mode
• 230MHz high frequency transducer

• Non-destructive analysis through package
• Package delamination
• Stack die delamination

• 1pA to 100mA range
• 100uV to 100V range

• Electrical failure validation
• I-V, C-V

• 5um prober
• Integrate with test board

• Electrical failure validation
• Circuit Edit

• RIE delayer
• Mechanical delayer
• Chemical delayer

• Remove Passivation/Metal/Oxide
• Metal short/open
• TEM sample preparation

• Acid etch
• Bas etch
• Solvent

• Junction stain
• Si dislocation defect
• Epi contamination

• InGaAs detector
• Lens 0.8x, 2.5x, 5x, 20x, 50x, 100x
• 12” wafer probe station
• Probe card integration

• ESD damage localization
• p-n junction leakage
• MOSFET short
• Latch-up localization
• Pressure resistance defect
• Wafer backside analysis

• Dual laser 1300nm and 1064nm
• Lens 2.5x, 5x, 20x, 50x, 100x
• 12” wafer probe station
• Digital Lock In function
• Probe card integration

• Metal open short localization
• ESD damage localization
• p-n junction damage
• Latch-up localization
• Pressure resistance defect
• Wafer backside analysis

• InSb detector
• Lens 0.8x, 4x, 8x, 15x
• 12” wafer probe station
• Probe card integration

• Replacing Liquid Crystal
• Special grain boundary (twin boundary, large
• angle and small angle boundaries)
• Grain size distribution